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Project List » Athermal annihilation of defects in Ge using extreme radiation environments: Myth or Reality? |
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Athermal annihilation of defects in Ge using extreme radiation environments: Myth or Reality?
www.nipne.ro/proiecte/pn4/13-projects.html
Extended website: https://dfna.nipne.ro/projects.php
Acronym: ANNEAL
Contracting Authority: UEFISCDI
Number / Date of the contract: 93PCE / 2025-07-01
Program: PN-IV-P1-PCE-2023-0567
Project Manager: Gihan Velisa
Partners:
Starting date / finishing date: 2025-07-01 / 2028-06-30
Project value: 1.147.368 RONAbstract: A long-standing objective in Ge-based device fabrication is the effective annealing of ion implantation-induced defects in crystalline Ge using low-temperature (LT) processes. A promising approach is to exploit the competitive interplay between the electronic energy loss (Se) of ions-within the intermediate energy regime accessible to industrial accelerators-and the pre-existing damage in the material, which can enable near-complete defect recovery at room temperature (RT). This mechanism is known as athermal ionization-induced annealing (AIIA).
Given the limited understanding of this competitive effect, the main objective of the present project is to advance both the understanding and the modelling of Se-driven processes governing the nonequilibrium evolution of defects in pre-damaged Ge at RT. The study will employ intermediate-energy ions that interact predominantly through ionization within the pre-damaged surface layers, while the contribution of nuclear energy loss (Sn) becomes relevant only near the end of their penetration depth. Our ultimate goal is to assess whether the AIIA process can be reliably employed as an LT manufacturing step for restoring the initial crystalline order in pre-damaged Ge, without compromising the formation of shallow B- or P-doped junctions. Successful validation of this approach would open a new and expandable research direction within IFIN-HH, increasing both the visibility and the scientific impact of our research group in the field of ion-beam-induced material modification.
Objectives: This fundamental research project aims to advance scientific knowledge on the annihilation processes of defects induced by ion implantation in semiconductors. As a precursor study, it has the potential to contribute decisively to the optimization of processing protocols currently employed in the semiconductor industry. Specifically, the project will focus on the experimental validation or invalidation of the hypothesis that the AIIA process does not hinder the formation of B- or P-doped junctions-an area of research that remains insufficiently explored. The outcomes of this investigation will enhance the visibility and impact of our research group within the international scientific community.
THE STAGES OF THE PROJECT AND DELIVERY DATES
1. Advancing scientific knowledge on the defect annihilation process induced by ion implantation in Germanium single crystals (Part I) (2025-12-31) Results
2. Advancing scientific knowledge on the defect annihilation process induced by ion implantation in Germanium single crystals (Part II) (2026-12-31)
3. Experimental validation/invalidation of the hypothesis that the AIIA process does not hinder the formation of shallow junctions doped with B or P (Part I) (2027-12-31)
4. Experimental validation/invalidation of the hypothesis that the AIIA process does not hinder the formation of shallow junctions doped with B or P (Part II) (2028-06-30)
RESULTS
PUBLISHED ARTICLES
RESEARCH TEAM
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