Ionization Induces Healing of Defects in Silicon
Dr. Velisa's research group (IFIN-HH, Romania) in collaboration with Prof. Weber (UTK, US), Dr. Zhang (UTK, US), Dr. Y. Tong (Yantai University, China) and Dr. Zarkadoula (ORNL, US) have advanced the understanding of ionization-induced healing by revealing a substantial annealing of pre-existing defects and restoration of structural order in silicon (Si) from energy transferred to electrons by intermediate-energy incident ions via inelastic ionization processes. Details